View STP7N60M2_8876047.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. june 2013 docid024622 rev 1 1/21 std7n60m2, STP7N60M2, stu7n60m2 n-channel 600 v, 0.86 typ., 5 a mdmesh ii plus? low q g power mosfet in dpak, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. to-220 1 2 3 tab 1 3 tab dpak 3 2 1 tab ipak am15572v1 , tab order codes v ds @ t jmax r ds(on) max i d std7n60m2 650 v 0.95 5 a STP7N60M2 stu7n60m2 table 1. device summary order codes marking package packaging std7n60m2 7n60m2 dpak tape and reel STP7N60M2 to-220 tube stu7n60m2 ipak www.st.com
contents std7n60m2, STP7N60M2, stu7n60m2 2/21 docid024622 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid024622 rev 1 3/21 std7n60m2, STP7N60M2, stu7n60m2 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3.5 a i dm (1) drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 60 w dv/dt (1) 1. i sd 5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (2) 2. v ds 480 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit dpak to-220 ipak r thj-case thermal resistance junction-case max 2.08 2.08 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 99 mj
electrical characteristics std7n60m2, STP7N60M2, stu7n60m2 4/21 docid024622 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a 0.86 0.95 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -271-pf c oss output capacitance - 15.7 - pf c rss reverse transfer capacitance -0.68-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 75.5 - pf r g intrinsic gate resistance f = 1 mhz open drain - 7.2 - q g total gate charge v dd = 480 v, i d = 5 a, v gs = 10 v (see figure 17 ) -8.8-nc q gs gate-source charge - 1.8 - nc q gd gate-drain charge - 4.3 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 2.5 a, r g = 4.7 , v gs = 10 v (see figure 16 and 21 ) -7.6-ns t r rise time - 7.2 - ns t d(off) turn-off delay time - 19.3 - ns t f fall time - 15.9 - ns
docid024622 rev 1 5/21 std7n60m2, STP7N60M2, stu7n60m2 electrical characteristics 21 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 5 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 18 ) - 275 ns q rr reverse recovery charge - 1.55 nc i rrm reverse recovery current - 11 a t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18 ) - 376 ns q rr reverse recovery charge - 2.1 nc i rrm reverse recovery current - 11 a
electrical characteristics std7n60m2, STP7N60M2, stu7n60m2 6/21 docid024622 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 10 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15887v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 10 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15814v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v ds (v) 20 (a) 5 15 3v v gs =7, 8, 9, 10, 11v 1 3 5 4v 5v 6v 7 8 9 am15815v1 i d 6 4 2 0 0 4 v gs (v) 8 (a) 2 6 10 1 3 5 v ds =19v 7 8 9 am15816v1
docid024622 rev 1 7/21 std7n60m2, STP7N60M2, stu7n60m2 electrical characteristics 21 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs. temperature figure 13. normalized on-resistance vs. temperature v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 12 300 200 100 0 400 500 v ds v ds (v) v dd =480v i d =5a 10 am15824v1 r ds(on) 0.860 0.850 0.840 0.830 0 3 i d (a) ( ) 2 4 0.870 v gs =10v 5 1 0.880 0.890 0.900 0.910 am15817v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15818v1 e oss 2 1 0 0 v ds (v) (j) 200 100 300 400 500 600 am15819v1 v gs(th) 0.9 0.8 0.7 0.6 t j (c) (norm) -50 1.0 i d =250a 0 50 100 1.1 am15718v1 r ds(on) 1.3 0.9 0.5 -50 -25 t j (c) (norm) 0 100 0.7 1.1 i d =2.5 a 1.5 25 50 75 1.7 1.9 2.1 2.3 am15821v1
electrical characteristics std7n60m2, STP7N60M2, stu7n60m2 8/21 docid024622 rev 1 figure 14. drain-source diode forward characteristics figure 15. normalized v ds vs. temperature v sd 0 2 i sd (a) (v) 1 3 4 0 0.2 0.4 0.6 0.8 t j =-50c t j =150c t j =25c 5 1 1.2 1.4 am15822v1 v ds -50 -25 t j (c) (norm) 50 100 0.93 0.95 0.97 0.99 1.01 i d = 1ma 0 25 75 1.03 1.05 1.07 1.09 1.11 am15823v1
docid024622 rev 1 9/21 std7n60m2, STP7N60M2, stu7n60m2 test circuits 21 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std7n60m2, STP7N60M2, stu7n60m2 10/21 docid024622 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024622 rev 1 11/21 std7n60m2, STP7N60M2, stu7n60m2 package mechanical data 21 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data std7n60m2, STP7N60M2, stu7n60m2 12/21 docid024622 rev 1 figure 22. dpak (to-252) drawing 0068772_k
docid024622 rev 1 13/21 std7n60m2, STP7N60M2, stu7n60m2 package mechanical data 21 figure 23. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_k
package mechanical data std7n60m2, STP7N60M2, stu7n60m2 14/21 docid024622 rev 1 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024622 rev 1 15/21 std7n60m2, STP7N60M2, stu7n60m2 package mechanical data 21 figure 24. to-220 type a drawing bw\sh$b5hyb7
package mechanical data std7n60m2, STP7N60M2, stu7n60m2 16/21 docid024622 rev 1 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid024622 rev 1 17/21 std7n60m2, STP7N60M2, stu7n60m2 package mechanical data 21 figure 25. ipak (to-251) drawing 0068771_k
packaging mechanical data std7n60m2, STP7N60M2, stu7n60m2 18/21 docid024622 rev 1 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
docid024622 rev 1 19/21 std7n60m2, STP7N60M2, stu7n60m2 packaging mechanical data 21 figure 26. tape figure 27. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std7n60m2, STP7N60M2, stu7n60m2 20/21 docid024622 rev 1 6 revision history table 13. document revision history date revision changes 06-jun-2013 1 first release.
docid024622 rev 1 21/21 std7n60m2, STP7N60M2, stu7n60m2 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STP7N60M2

	To Download STP7N60M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .